Title: Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors

Authors (8): M. R. Farrow, J. Buckeridge, T. Lazauskas, D. Mora-Fonz, D. O. Scanlon, C. R. A. .Catlow, S. M. Woodley, A. A. Sokol

Themes: Design (2017)

DOI: 10.1002/pssa.201600440

Citations: 7

Pub type: article-journal

Publisher: Wiley

Issue: 4

License: http://doi.wiley.com/10.1002/tdm_license_1

Publication date(s): 2017/04 (print) 2017/03/09 (online)

Pages: 1600440

Volume: 214 Issue: 4

Journal: Physica Status Solidi (A)

Link: https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201600440

URL: http://dx.doi.org/10.1002/pssa.201600440

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