Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors
Heterostructures of GaN with SiC and ZnO enhance carrier stability and separation in framework semiconductors
Authors (8): M. R. Farrow, J. Buckeridge, T. Lazauskas, D. Mora-Fonz, D. O. Scanlon, C. R. A. Catlow, S. M. Woodley, A. A. Sokol
Themes: Design
DOI: 10.1002/pssa.201600440
Citations: 8
Pub type: article-journal
Pub year: 2017

Publisher: Wiley

Issue: 4

License: http://doi.wiley.com/10.1002/tdm_license_1

Publication date(s): 2017/04 (print) 2017/03/09 (online)

Pages: 1600440

Volume: 214 Issue: 4

Journal: Physica Status Solidi (A)

Link: https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201600440

URL: http://dx.doi.org/10.1002/pssa.201600440

A computational approach, using the density functional theory, is employed to describe the enhanced electron-hole stability and separation in a novel class of semiconducting composite materials, wit...

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